SEMICONDUCTOR FUSE FORMATION METHOD

摘要

PURPOSE: A semiconductor fuse formation method is provided to prevent the crack of dielectric substance and the damage of neighboring fuse due to the crush of a fuse CONSTITUTION: The semiconductor fuse formation method comprises: a step forming a fuse(12) and an active element(14) on different areas of a semiconductor substrate(10); a step forming dielectric layers(32,34) on the fuse and active element; a step forming via holes(44) for exposing the contact area of the fuse and active element and passing through a selected area of the dielectric layer; a step depositing conductive substance(46a,46b,46c) on the fuse and the exposed area through upper part of the dielectric layer and via holes; and a step removing conductive substance deposited on the fuse with remaining conductive substance deposited on the contact area of the active element.