METHOD FOR MANUFACTURING SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor memory device is provided to prevent misalignment when forming a fine pattern and a contact hole. CONSTITUTION: The method for manufacturing a semiconductor memory device comprises the steps of: forming a first interlayer insulation film(740) on a exposed area of a substrate(700) and a gate pattern; forming a first bit line contact hole(800) on a memory cell area by etching the first interlayer insulation film; forming a first bit line pad(730) by depositing a conductive materials on the first bit line contact hole; forming a second interlayer insulation film(750) on the first bit line pad and the first interlayer insulation film; forming a storage area contact hole in a memory cell area and a second bit line contact hole in a peripheral circuit area by etching a predetermined area of the first and second interlayer insulation films; forming a storage pad(770) and a second bit line pad(780) by depositing a conductive materials in the storage contact hole and the second bit line contact hole; forming a third interlayer insulation film(790) on the second interlayer insulation film, the storage pad and second bit line pad; etching the second and third interlayer insulation films so as to expose a part of the first and second bit line pads; forming a bit line on the exposed first and second bit line pads and the third interlayer insulation film; forming a fourth interlayer insulation film(840) on the third interlayer insulation film and the bit line; and forming a storage contact hole(850) by etching the fourth interlayer insulation film so that a part of the storage pad can be exposed, and forming a storage node(860) by depositing a conductive materials on the storage contact hole.