METHOD FOR FORMING A CAPACITOR OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: A capacitor formation method is provided to simplify manufacturing process without sophisticated processes by enhancing an area of a storage electrode using TiN layer instead of HSG(hemi-spherical grain). CONSTITUTION: The method comprises the steps of: forming an interlayer dielectric(20) having contact holes on a semiconductor substrate(10) having transistors; forming a storage electrode(21) to fill a polysilicon layer into the contact holes; forming a TiN layer(22) having a high roughness on the resultant structure using sputtering having high pressure and high N2 flow rate; and removing the TiN layer(22), so that the surface area of the storage electrode is increased.