CAPACITOR PREPARATION METHOD OF SEMICONDUCTOR ELEMENT

摘要

PURPOSE: A capacitor preparation method of semiconductor element is provided to remove contaminant on a silicon which a HSG thin film is formed on and form the HSG thin film having uniform surface area. CONSTITUTION: The capacitor preparation method of semiconductor element comprises: a step forming amorphous silicon films(12,23) doped as storage electrode substance on semiconductor substrates(10,20); a step etching the doped amorphous silicon films into prescribed storage electrode shape; a step removing contaminant on the doped amorphous silicon films by treating the surface of the etched doped amorphous silicon films by using O2 plasma; and a step forming storage electrodes(100,200) by forming a hemisphere shape grain polysilicon thin film on the surface of the doped amorphous silicon films.