FORMING METHOD OF METAL WIRE OF A SEMICONDUCTOR DEVICE

摘要

PURPOSE: A forming method of metal wire is provided to measure a size of contact hole easily by improving surface characteristics of lower part of contact hole and to reduce contact resistance by removing residue of photoresist film completely. CONSTITUTION: The method comprises the steps of: forming a metal film(21a), an ARC(Anti-Reflective Coating) film(22a) and a polysilicon film(23a)_ on a semiconductor substrate(20) orderly, forming a lower pattern(200) of electric conduction film by patterning the polysilicon film, ARC film, and a metal film, forming an insulating film between layers on the entire surface, forming a contact hole by etching the insulating film between layers to expose some part of the polysilicon film, and forming an upper pattern of electric conduction film which contacts with the lower part of electric conduction pattern through a contact hole(25).