METHOD FOR FORMING CONTACT OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A contact method of semiconductor device is provide to contact a lower electrode of polyside structure and a upper electrode of polyside structure through a contact hole. CONSTITUTION: The method comprises the steps of: forming a lower electrode(23) of polyside structure on a semiconductor substrate(21); forming an interlayer insulating film(25) on the whole structure having the lower electrode and then forming a contact hole for exposing a portion of the lower electrode; injecting silicon atoms into a surface of the lower electrode exposed through the contact hole; and forming an upper electrode(26) connected to the lower electrode through the contact hole. Thereby, it is possible to reduce a contact resistance by ohmic contacting the lower electrode and the upper electrode and enhance a signal processing speed.