| 摘要 |
PURPOSE: A method of making contact plug is provided to prevent the barrier metal cracking and volcano phenomenon. CONSTITUTION: The method comprises the sequential steps of forming contact hole in an insulating layer on wafer, depositing barrier metal layer on the wafer including the hole, depositing connection metal layer on the wafer deposited by the barrier metal layer, getting rid of the most amount of the connection metal layer and the barrier metal layer on the surface of the insulating layer, depositing the plug metal on the wafer to fill the contact hole, annealing the wafer having the plug at a sufficient temperature. In the method, the barrier metal on the bottom face of contact hole can have sufficient thickness without the happening of crack or pin hole on the surface of barrier metal.
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