| 摘要 |
PURPOSE:To form a barium titanate-based semiconductor porcelain compsn. having superior withstand voltage characteristic and low specific resistance by substituting Sr, Ca and Pb for part of Ba in BaTiO3 and using the resulting compsn. as a base. CONSTITUTION:A barium titanate-based compsn. contg., by mol, 65-93% BaTiO3, 1-25% SrTiO3, 0.01-<3% CaTiO3 and >5-20% PbTiO3 is used as a base and Mn, silica and a semiconductor forming agent are incorporated into the base to obtain a barium titanate-based semiconductor porcelain compsn. |
