发明名称 SURFACE TREATING DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a surface treating device capable of preventing the quality of a film from be deteriorated due to the collision of charge particles and capable of forming a film high in quality at a high speed. SOLUTION: A casing 2 of a surface treating device 1 is partitioned into two chambers of a plasma generating chamber 3 provided with plasma generating electrodes 5 and 5' and a substrate treating chamber 4 provided with a substrate supporting stand 8. A plasma blow-off port 6 is formed on the electrode 5' composing the bulkhead of both chambers 3 and 4. Moreover, on the space between the plasma blow-off port 6 and a substrate S placed on the substrate supporting stand 8, a mesh-shaped electrically conductive sheet 9 is arranged in a direction crossing plasma, and, by applying a minum variable bias to the sheet 9, the plus charged particles in the plasma are captured by the sheet 9, and the charged particles are removed from the plasma.</p>
申请公布号 JP2000026975(A) 申请公布日期 2000.01.25
申请号 JP19980194674 申请日期 1998.07.09
申请人 KOMATSU LTD 发明人 MIZUKAMI HIROYUKI;KOUSHIRI MASAYUKI;TOYOSHIMA YASUMASA;TABUCHI TOSHIHIRO
分类号 C23C16/50;H01J37/32;H01L21/205;H01L21/31;(IPC1-7):C23C16/50 主分类号 C23C16/50
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