发明名称 SINGLE-WAFER PROCESSING TYPE HEAT TREATING APPARATUS
摘要 PROBLEM TO BE SOLVED: To efficiently heat treat and carry a substrate to be treated for improving the throughput. SOLUTION: A cassette chamber 11 for housing cassettes and a heat treating furnace 1 for performing specified heat treatment, after lifting and carrying substrates W to be treated from a throat 3 by a liftable substrate holder 2 one by one are provided around a carrying chamber 39 having a carrying arm, a shutter chamber 5 having a heat insulation shutter 4 for thermally shielding the throat 3 to cool the substrates W lowered and carried out of the heat treating furnace 1 to a temp. low enough to carry, and a substrate cooling chamber for cooling the substrates W to a temp. sufficiently low to house in the cassette are provided, the wafers W are taken out of the cassette in the cassette chamber 5 and transferred to the substrate holder 2 in the shutter chamber 5 through the carrying arm, and the treated wafers W are taken from the substrate holder 2 and returned to the cassette through the substrate cooling chamber after the heat treatment.
申请公布号 JP2000021797(A) 申请公布日期 2000.01.21
申请号 JP19980185832 申请日期 1998.07.01
申请人 TOKYO ELECTRON LTD 发明人 AOKI KAZUJI;TSUKADA AKIHIKO;HARAOKA TSUTOMU
分类号 H01L21/677;H01L21/22;H01L21/68;(IPC1-7):H01L21/22 主分类号 H01L21/677
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