| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for reducing base-collector junction capacitance by refining a base mesa, preventing the disconnection of a base electrode, and improving manufacturing yield. SOLUTION: This semiconductor device is provided with a semiconductor laminated structure having a stepped part formed on a semiconductor substrate 101, a wiring layer 118 formed don the upper face of the semiconductor laminated structure across the stepped part, and support member 115a provided for embedding the stepped part, so that the wiring layer 118 can be brought into contact with only the upper face of the stepped part, without being brought into contact with the lower face of the stepped part. Then, the upper face of the stepped part and the upper face of the support member 115a can be made to exist substantially being flush with each other. |
