| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a stack-like capacitor which is used for a DRAM and large in surface area. SOLUTION: When a capacitor composed of an upper electrode 16, a dielectric layer 13, and a lower electrode 15 is manufactured, a lower electrode base 10a is previously cleaned with an acid solution to remove a natural oxide film from its surface, a first amorphous silicon layer 11 is deposited, and a second amorphous silicon layer is deposited on the first amorphous silicon layer 11 and turned by seeding/annealing into a silicon layer 12b where hemispherical grains(HSG) protrude from its surface, whereby the surface of the lower electrode 15 can be enlarged in area. |
