| 摘要 |
PROBLEM TO BE SOLVED: To prevent the homogeneity of a cell from degradation which is caused by the fact that a word line and a selection line are set away from each other by a specified distance, by providing a dummy line while extended parallel to the word line in a separation region between the selection line and the adjacent word line. SOLUTION: Dummy line D/L is of the same pitch as word lines WL1,..., W/Ln comprising repetition pattern, while provided outside of a first word line W/K1 and nth word line W/Ln. With the dummy line D/L inserted, the first and nth word lines W/L1 and W/Ln have a pattern similar to remaining repetition word lines W/L2,..., W/Ln-1, so a loading effect decreases in a lithography and etching processes for patterning the word line W/L, for improved homogeneity in critical dimension of the word line W/L. |
