| 摘要 |
PROBLEM TO BE SOLVED: To enable a capacitor to secure a capacitance which is relatively larger than that of a capacitor having a simple stacked structure. SOLUTION: A method for manufacturing capacitor includes a step of forming a contact node 114 electrically connected to a semiconductor substrate 100 through first insulating films 108 and 110 formed on the substrate 100, a step of forming a second insulating film 116 on the node 114 and one 110 of the insulating films 108 and 110, and a step of forming an opening in such a shape that at least two or more circles partially overlap each other, as viewed from the top side of the substrate 100 by etching the second insulating film 116 until the top of the contact node 114 and a part of the surface of the first insulating film 110 are exposed. The method also includes a step of forming a conductive film 120 for capacitor node having a prescribed film thickness, in such a way that the film 120 is brought into electrical contact with the bottom face and side faces of the openings at portions, where the circles partially overlap each other. |
