PATTERN EXPOSURE METHOD AND PATTERN EXPOSURE DEVICE

摘要

PROBLEM TO BE SOLVED: To expose a large area region on a wafer by one shot, by irradiating a fluorescent film by electron beam which passed through an aperture pattern of a transfer mask unit and by integrally exposing a photo resist film on the wafer unit by light which has a wave length performance of an ultraviolet region which is radiated from the fluorescent film. SOLUTION: A transfer mask 301 forms an aperture pattern which corresponds to a transfer pattern on a metallic film for electron beam shielding and it means to from a tungsten or gold thin film on a single surface of a silicon substrate and on an internal surface of the aperture. Additionally a luminescent film 302 which has a ultraviolet region light emitting performance by electron beam is formed on the single surface of the transfer mask 301, the electron beam which passed through the aperture pattern of the transfer mask 301 is radiated to the luminescent film 302 and integral exposure for a photo resist film 303 on a wafer unit 304 is made by the radiation of the light which has an ultraviolet region wave length performance and is emitted from the luminescent film 302.