| 摘要 |
PROBLEM TO BE SOLVED: To improve a generation efficiency even if an impurity such as an oxide exists in a crystal grain boundary, by separating a polycrystal semiconductor film with an oxide or a nitride particle being formed at the crystal grain boundary among a plurality of semiconductor crystal particles, and setting the average thickness of the grain boundary layer to a specific range. SOLUTION: Powder-shaped or glass-shaped silicon that becomes a raw material is introduced from a raw material supply part 3 to a high-temperature plasma generation part 1 for generating a high-temperature plasma at several thousands - several tens of thousands deg.C, a melted object is deposited on a substrate 4, and a cooling speed is properly controlled by a substrate-heating part 6, thus forming a polycrystalline semiconductor film. The polycrystalline semiconductor film is separated by an oxide being formed at the crystal grain boundary among a plurality of semiconductor crystal particles or the grain boundary layer of a nitride, and the average thickness of the separated grain boundary layer is set to 10 nm-300 nm, thus improving a generation efficiency even if an impurity such as an oxide exists at the crystal grain boundary.
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