ELECTROSTATIC CHUCK PARTICLE REDUCING METHOD AND SEMICONDUCTOR MANUFACTURING APPARATUS

摘要

PROBLEM TO BE SOLVED: To reduce particles generated in association with temperature rise of a wafer after the wafer has been mounted on the chucking surface of an electrostatic chuck. SOLUTION: A wafer is placed on the chucking surface of an electrostatic chuck, a wafer having a temperature TO which is lower than the temperature of the chucking surface, is chucked to the surface by applying voltage to the electrostatic chuck. When wafer temperature is raised to the saturation temperature, the stress which resulted from the difference between the thermal expansion coefficient of wafer and the thermal expansion coefficient of the electrostatic chuck has an open stage obtained by slidingly moving the wafer on the surface.