| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent occurrence of electrochemical reaction in a barrier type anodic oxidation film covering a gate electrode by separating a porous anodic oxidation film through etching at a conductor connecting part and then removing it through etching. SOLUTION: At a conductor connecting part, an SiO2 film 42 covers a substrate 41 uniformly and an SiO2 film 44 is deposited directly on the SiO2 film 42. More specifically, a polysilicon pattern 43 is removed from the conductor connecting part at the time of patterning an active region and an aluminum layer 45 is provided on the SiO2 film 44 formed on the polysilicon pattern 43 followed by formation of a barrier type anodic oxidation film 46. Subsequently, the barrier type anodic oxidation film 46 is covered with a resist pattern 48 and the barrier type anodic oxidation film 46 exposed through a window is removed by wet etching of Cr mixed acid using the resist pattern 48 as a mask.</p> |
