| 摘要 |
PROBLEM TO BE SOLVED: To improve the manufacturing yield of wiring to be formed by a process. SOLUTION: Dummy chips DC having second groove patterns formed in the same process as first groove patterns of main body chips SC are arranged in a region, in which the main body chips SC are not formed at the peripheral part of a semiconductor wafer SW1. Thus, the surfaces of metallic films accumulated on the semiconductor wafer SW1 are polished uniformly by CMP, and the erosion phenomenon or dishing phenomenon of the metallic films to be embedded in the first groove patterns can be suppressed.
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