| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device where elements close to each other are prevented from affecting each other and from degrading in inductance and Q value by enhancing a board in resistance and the method of manufacturing the device. SOLUTION: A shielding layer 103 is made to confront an inductor 108 which forms an analog circuit formed on an element isolating region of a semiconductor substrate so as to be arranged between the inductor 108 and an element isolating region 102 which is isolated from the inductor 108 by a prescribed distance. The semiconductor substrate can be enhanced in resistance, elements close to each other can be restrained from affecting each other and from degrading in inductance and Q value, so that the analog circuit is capable of operating stably. The shielding layer 103 is formed of high-resistance polysilicon, single crystal silicon or amorphous silicon. An impurity diffusion region whose conductivity-type is opposite to that of a well under an element isolation region is made to serve as a shielding layer.
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