| 摘要 |
PROBLEM TO BE SOLVED: To provide an MOSFET which makes it hard for high frequency components to leak. SOLUTION: This MOSFET is constituted of a first conductive type substrate 3, second conductive type semiconductor regions 1, 2 which are provided along the main surface of one side of the substrate 3, a first conductive type source region 14 provided along the main surface of one side of the substrate in the semiconductor regions 1, 2, a source electrode S connected to the source region 14, a drain electrode D provided along the main surface of another side of the substrate 3, a gate electrode G where a bias voltage is applied between the source electrode S and the gate electrode G so as to change the conductive type of a channel region Ch which is positioned between the substrate 3 in the conductive domains 1, 2 and the source region 14, and an insulating layer IS positioned between the gate electrode G and the substrate 3. In this case, the configuration is such that the gate electrode G has a diode DI having a P-N junction provided along the direction of the applied bias voltage. |
