| 摘要 |
PROBLEM TO BE SOLVED: To form LEDs in high density without lowering the quantity of light emission. SOLUTION: A p-type diffused region 15 constituting an LED 20 is made in the region within the opening 19a of an n-type semiconductor substrate 12 and in its vicinity by diffusing p-type impurities from the opening 19 provided in an interlayer insulating film 19. A p-side electrode 17 is in contact with a p-type diffused region 15 in the opening 19a. Moreover, an n-side electrode 18 is provided at the rear of an n-type semiconductor substrate 12. Adjacent p-type diffused regions 15 are made, being slid reversely to each other to the main scan axis, whereby a plurality of LEDs 20 are arranged zigzag. |
