| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory cell structure capable of integrating ROM memory cells into the memory cell matrix to be electrically written in formed by self-aligned sourcing process. SOLUTION: A memory cell matrix structure formed by self aligning with a field oxide layer 3 and an upper side poly Si is equipped with at least one each of the first ROM cell 6 and at least one each of the second ROM cell 5 in relation to the rows and columns of a matrix as well as a P type Si substrate 9 whereon the first and second separating regions are formed for making the first ROM cell 6 specify the fine columns, a gate element 2 traversing and extending the fine columns from one side of the first separating region to one side of the second separating region, the third and fourth n type regions 11, 12 as well as the field oxide region 3 blocking the formation of a conductive channel on the substrate 9, besides, the field oxide region does not exists in the second ROM cell 5 although in the same structure as that of the first ROM cell 6. |
