| 摘要 |
PROBLEM TO BE SOLVED: To improve a ferroelectric capacitor in reliability. SOLUTION: An upper electrode 14A is formed by the use of an oxide film mask 16A, and the oxide film mask 16A is left as it is even after the upper electrode 14A is formed. A lower electrode 10A and a ferroelectric film 12A are formed by the use of an oxide film mask 22A and a photoresist mask 24, and the oxide film mask 22A is left unremoved as it is even after the lower electrode 10A is formed. By this setup, the lower electrode 10A and upper electrode 14A are prevented from being short-circuited by residues, so that a ferroelectric capacitor can be improved in reliability. |
