| 摘要 |
PROBLEM TO BE SOLVED: To provide a photomask capable of enhancing the degree of integration of an IC device. SOLUTION: This double-sided photomask is equipped with two complementary pattern layers formed on respective surfaces of a transparent substrate 700. The two complementary pattern layers are combined into a complete pattern. The two complementary pattern layers are separately formed on different surfaces. In the event of a phase shift photomask, the double-sided photomask is equipped with a phase shift layer. |
