摘要 |
PROBLEM TO BE SOLVED: To eliminate the measurement error of an aligning mark, if the aligning mark is deformed, and permit the short time measurement by forming an evaluation chart composed of a plurality of lines different in line width on a wafer and selecting an optimum line width for the aligning, based on the evaluation chart. SOLUTION: An evaluation chart 100 composed of n lines having different line widths Lw1, Lw2,..., Lwn is formed on a wafer, signals detected therefrom according to the light width have different shapes, and if an aligning mark is deformed, the design value of the line width on a mask is not always reproduced as a line width on an actual wafer. A signal obtd. from the evaluation chart 100 is evaluated to determine an optimum line width fitted to that on the actual wafer and an aligning mark formed with this optimum line width is measured to align a mask with the wafer.
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