发明名称 METHOD AND DEVICE FOR SEMICONDUCTOR MANUFACTURING CONDITIONS, SEMICONDUCTOR MANUFACTURING EQUIPMENT USING THE DEVICE AND SEMICONDUCTOR SUBSTRATE MANUFACTURED BY THE SEMICONDUCTOR MANUFACTURING EQUIPMENT
摘要 PROBLEM TO BE SOLVED: To provide a setting method for semiconductor manufacturing conditions, a device, a semiconductor manufacturing equipment by which a plasma process of a semiconductor can be performed under stable conditions and a semiconductor substrate. SOLUTION: This method comprises a light-emitting means 5, spectrum means 28 by which plasma transmitted light is spectrally diffracted, light-detecting means 30 for converting transmitted light intensity to an electrical signal, transmitted light intensity calculating means 35 for calculating transmitted light intensity, based on the electrical signal, an absorbed wavelength calculating means 35 for calculating the absorbed wavelength based on the transmitted light intensity 35, corresponding to a wavelength selecting means 35 for selecting more than two corresponding wavelengths, normal transmitted light data making means 35 for making normal transmitted light data which is the relation between parameters and each corresponding wavelength, a determination means 35 for permissible range of the transmitted light, by which the permissible range of the transmitted light is determined, calculating means 35 for the transmitted light intensity during process with which the transmitted light intensity during the substrate 7 is processed, and candidate selecting means 35 for selecting candidate parameters which correspond to the intensity during the process.
申请公布号 JP2000021855(A) 申请公布日期 2000.01.21
申请号 JP19980184647 申请日期 1998.06.30
申请人 HAMAMATSU PHOTONICS KK 发明人 YOSHIDA HARUMASA
分类号 H01L21/302;H01L21/203;H01L21/205;H01L21/3065;(IPC1-7):H01L21/306 主分类号 H01L21/302
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