| 摘要 |
PROBLEM TO BE SOLVED: To enhance the characteristics of a device by bringing a light shielding layer covering a transfer gate into contact with a photodiode and removing a gate insulation film thereon thereby preventing generation of smear and noise charges flowing into the photodiode. SOLUTION: A photodiode having a PD-N region 33 and a PD-P region 39 is formed and a second insulation film 40 is formed on a gate insulation film 36 including a first insulation film 38. The second insulation film 40 and the gate insulation film 36 are then etched back sequentially and removed from the upper side of the photodiode. Subsequently, a light shielding layer 41 and a second photosensitive layer are formed sequentially on the entire surface including the second insulation film 40 and the second photosensitive layer is subjected to selective exposure and development such that only the upper side of the photodiode is removed. The light shielding layer 41 is then etched using the second photosensitive layer as a mask before removing the second photosensitive layer. The light shielding layer 41 abuts on the opposite end parts of the PD-P region 39.
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