| 摘要 |
PROBLEM TO BE SOLVED: To improve reliability and yield by providing consistency of salicide technology with respect to a process of an analog device, while surely restraining an input/output part from turning into silicide state. SOLUTION: A titanium film 30 is formed over an entire semiconductor substrate 301, and a titanium nitride film 313 is formed thereon. A resist 310 is formed on all surfaces other than a resist part 304 and an input/output region (step a). The titanium nitride 313 at an opening part is removed with a mask of the resist 310 (step b). After the resist is removed, titanium film 308 at the opening part is removed with a mask of the titanium nitride film 313 (step d). A gate electrode 104a at a logic part and the semiconductor substrate 301, where the titanium film 308 is left, are changed into a silicide state by heat treatment to form a titanium silicide layer 311 (step e). The titanium film 308 and the titanium nitride film 313, which have not reacted, are removed (step f).
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