SEMICONDUCTOR ELEMENT, METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor element that can suppress warpage caused by the thermal stress of a III-V compound semiconductor element containing N, and can prevent a crystal defect and a crack from being generated in an element layer. SOLUTION: A III-V compound semiconductor layer is formed on one main surface of an Al2O3 substrate, where the III-V compound semiconductor layer includes a GaN buffer layer 12, an n-type GaN contact layer 13, an n-type AlGaN clad layer 14, a GaN optical guide layer 15, a GaInN quantum well activation layer 16, a p-type AlGaN clad layer 17, an n-type GaN current block layer 18, a p-type GaN contact layer 19, or the like. On the other hand, a ZnO layer 112 is formed on the other main surface of the substrate 11. The III-V compound semiconductor layer and the AnO layer 112 have a thermal coefficient of expansion that is smaller than that of the substrate, thus preventing warpage from being generated on cooling after forming the semiconductor layer.