发明名称 SEMICONDUCTOR LIGHT EMITTING ELEMENT
摘要 PROBLEM TO BE SOLVED: To enhance an efficiency of an element, lower an operating voltage, and increase design flexibility, by a method wherein at least an inorganic substance layer and an organic substance layer of a hole transportation are laminated on a substrate, and the inorganic substance layer is formed as an oxide film having an wurtzite-containing crystal structure. SOLUTION: A luminous element is constituted by laminating a Si substrate 1, a hole injection electrode 2, an inorganic substance layer 4, an organic substance layer 5, and an electron injection electrode 3, and a drive power source E is connected to each electrode. A buffer layer is provided on a substrate, and an wurtzite compound thin film is formed thereon. A thin film such as an R-Zr-based oxide, etc., is formed on the buffer layer, and on the buffer layer containing at least a species of thin films, the thin film having high crystallinity and superior surface flatness can be formed on a Si substrate. For this reason, a thin film having an wurtzite crystal structure such as a ZnO-based thin film, an AlGaInN-based thin film, or the like is formed as an epitaxial film on the Si substrate via the buffer layer, thereby attaining monocrystal of high quality.
申请公布号 JP2000022205(A) 申请公布日期 2000.01.21
申请号 JP19980204432 申请日期 1998.07.03
申请人 TDK CORP 发明人 YANO YOSHIHIKO
分类号 H01L33/12;H01L33/16;H01L33/32;H01L33/34;H01S5/00;H01S5/30 主分类号 H01L33/12
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