发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To realize a semiconductor device that provides a prescribed current independently of temperature with a small scale circuit configuration. SOLUTION: Characteristic curves of a source-drain current (IDS) of a transistor(TR) with an optional channel length and an optional channel width are obtained with respect to a gate-source voltage (VGS) at various temperatures and a gate-source voltage (VG) at a singular point at which pluralities of the characteristic curves cross with each other at the various temperatures is applied to a gate terminal. In this case, a current (ID) flowing between the drain and the source is constant independently of the temperatures.
申请公布号 JP2000022453(A) 申请公布日期 2000.01.21
申请号 JP19980184828 申请日期 1998.06.30
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KANAZAWA HIDEKI
分类号 H03F1/30;(IPC1-7):H03F1/30 主分类号 H03F1/30
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