| 摘要 |
PROBLEM TO BE SOLVED: To enhance a performance index, by a method wherein a contained oxygen concentration of a thermionic semiconductor composition obtained by heating and extruding a powdered thermionic semiconductor crystal is less than a specified value. SOLUTION: A thermionic semiconductor crystal alloy 11 is pulverized in a global box 10 to form a thermionic semiconductor crystal powder 12. The pulverization is made under an environment that a contained oxygen concentration is less than 10,000 ppm. The thermionic semiconductor crystal powder 12 obtained in a pulverizing step is filled up in a die 14. A hot extrusion step is made in the global box 40 in which inert gas is filled. This is made under an environment that the contained oxygen concentration in the global box 40 is less than 10,000 ppm. Both of a powdering step and a hot extruding step are made under an environment that the contained oxygen concentration is less than 10,000 ppm, thereby attaining a superior performance index.
|
