| 摘要 |
PROBLEM TO BE SOLVED: To prevent the deterioration of life fine in hot carriers caused by H2O contained in an interlayer film. SOLUTION: In a gate structure 20, a gate oxide film 16 and a gate electrode 18 are deposited sequentially on a semiconductor substrate 10. High conductive regions source 12 and drain 14 are formed on an upper face of the semiconductor substrate 10. An H2O reduced film 22 is formed on the semiconductor substrate 10 with a gate structure to cover the face of the gate oxide film 16. An insulating film 24 is deposited on the semiconductor substrate 10 with the gate structure, and a wiring is formed on the insulating film 24. An interlayer film 26 is overlaid on the wiring and the insulating film 24, and thereby a substantially flat device face can be obtained.
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