| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, where a contact resistance can be reduced, and a contact interface can be kept high in stability. SOLUTION: A lower conductive layer pattern of two-layered film composed of an upper first doped polysilicon film 22a, and a lower tungsten silcide film 22b is provided to a semiconductor substrate 20. Then, an interlayer insulating film 24 is formed on the semiconductor substrate 20, the interlayer insulating film 24 is etched so as to partially exposed the surface of the first tungsten silicide film and to form a contact hole 26. The substrate 20 is subjected to a quick thermal treatment in an atmosphere of H2. Thereafter, a second doped polysilicon film 28a and a second tungsten silicide film 28b are sequentially formed on the surface of a contact hole and the interlayer insulating film, and the second tungsten silicide film 28b and the second doped polysilicon film are patterned into an upper conductive layer pattern which comes into contact with the lower conductive layer pattern.
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