| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device, which can secure a gate work margin and can suppress the fluctuations of transistor characteristic by reducing the drop of a trench end part in the semiconductor device, where an element isolation region by means of STI(shallow trench isolation) is formed. SOLUTION: This manufacture method of a semiconductor device has a process for embedding an insulator in an element isolation groove 36 and forming an element isolation insulating film 38, a process where a first corrosion resistance layer 42 whose etching speed is slower than the insulator and a second corrosion resistance layer 43 the etching speed of which is much slow are stacked, a process where an opening is selectively installed in the second corrosion resistance layer 43 on at least one element forming region and the first corrosion resistance layer 42, and the element isolation insulating film 38 are etched/removed through the opening and a process, where the first and second corrosion resistance layers are removed and the element isolation insulating film on a substrate is polished and removed.
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