摘要 |
PROBLEM TO BE SOLVED: To improve a phase shift mask and its alignment detection, and reduce the size of trenches formable in a silicon wafer. SOLUTION: Opaque materials are disposed in selected portions of a substrate surface. An opaque material disposed in a first portion of the substrate surface has a cross-shaped space 116, and a first line of the cross-shaped space 116 forms a first portion of a first alignment detection index pair for an alignment detection area 102 while a second line thereof forms a second portion of the first alignment detection index pair for the alignment detection area 102. An opaque material 110 of each one of a second portion pair of the substrate surface has a plurality of spaces, portions situated beneath the substrate surface are exposed, respectively, by the plurality of spaces of the second portion, a space in a first area of the second portion is parallel to the first line of the cross-shaped space 116, and a space in a second area of the second portion is parallel to the second line of the cross-shaped space 116. |