发明名称 PHASE SHIFT MASK, ITS MANUFACTURE, AND ALIGNMENT DETECTING METHOD
摘要 PROBLEM TO BE SOLVED: To improve a phase shift mask and its alignment detection, and reduce the size of trenches formable in a silicon wafer. SOLUTION: Opaque materials are disposed in selected portions of a substrate surface. An opaque material disposed in a first portion of the substrate surface has a cross-shaped space 116, and a first line of the cross-shaped space 116 forms a first portion of a first alignment detection index pair for an alignment detection area 102 while a second line thereof forms a second portion of the first alignment detection index pair for the alignment detection area 102. An opaque material 110 of each one of a second portion pair of the substrate surface has a plurality of spaces, portions situated beneath the substrate surface are exposed, respectively, by the plurality of spaces of the second portion, a space in a first area of the second portion is parallel to the first line of the cross-shaped space 116, and a space in a second area of the second portion is parallel to the second line of the cross-shaped space 116.
申请公布号 JP2000019716(A) 申请公布日期 2000.01.21
申请号 JP19990167091 申请日期 1999.06.14
申请人 SIEMENS AG 发明人 SCHULZE STEFFEN F
分类号 H01L21/027;G03F1/00;G03F1/26;G03F1/32;G03F1/42;G03F7/20;G03F9/00 主分类号 H01L21/027
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