| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor circuit which is capable of limiting a leakage current to an irreducible minimum bringing out most a speed improving effect caused by a low threshold voltage. SOLUTION: A delay path region where a gate element lowered in threshold voltage is applied is limited to a range from the maximum delay value 23 (faster than this) before a gate element lowered in threshold voltage is applied to the new maximum delay value 24 (slower than this) when a gate element lowered in threshold voltage is applied. By this setup, a leakage current through a transistor lowered in threshold voltage can be reduced to an irreducible minimum bringing out most a speed improving effect caused by a low threshold voltage, and a problem such as an unnecessary leakage current carried by a wide range of chips as usual can be solved.
|
