| 摘要 |
PROBLEM TO BE SOLVED: To provide a field effect transistor, which can reduce parasitic capacitance between the gate electrode that gives a large effect on the frequency characteristic and the substrate on the side of the drain-electrode arranging region and has the T-shaped gate electrode that can assure reliability furthermore. SOLUTION: The lower part of a T-shaped gate electrode 54 is made to be a source-side insulating film on the side of a thin-film source-electrode arranging region and a drain-side insulating film 66 on the thick-film drain-electrode arranging region. Thus, the effective aspect ratio of an opening part 53 is made small, and a metal film is completely embedded there. Therefore, there is no risk to gaps being generated in a gate electrode branch part 59, and a parasitic capacitance Cgd on the side of the drain-electrode arranging region can be further suppressed to a lower value.
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