| 摘要 |
PROBLEM TO BE SOLVED: To avoid breaking a gate oxide film by the intrinsic gettering with a reaction of oxygen (Oi) with Si and the gettering with B/metal impurity pairs wherein the p+ substrate resistance of a p/p+ epitaxial substrate is set in specified range. SOLUTION: In the intrinsic gettering for producing a reaction product of oxygen (Oi) of a p+ substrate with Si in the p+ substrate, the gettering characteristic of a semiconductor integrated circuit is obtd. from a gate oxide film breakdown characteristic of an MOS transistor. Using a p/p+ epitaxial substrate having a p+ substrate resistivity of 5-15 mΩ-cm, the gettering effect is enhanced by Boron/metal impurity pairs. When a metal impurity is fixed to inactive regions of a semiconductor integrated circuit by such gettering, the gate oxide film of the MOS transistor is not broken and the reliability of the semiconductor integrated circuit can be greatly improved.
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