| 摘要 |
PROBLEM TO BE SOLVED: To surely form a dielectric with a low dielectric constant between conductors of an integrated circuit and between semiconductor elements with ease by comprising a matrix formable cureable precursor and hollow polymer particles. SOLUTION: One of resin suitable for a setting precursor is a thermosetting resin such as an epoxy resin and polyimide resin, while the other is a substance containing one or more kind of substance selected from organosilane represented by a general formula R1nSi(OR2)4-n, its hydrolyte, and its partial condensate as a principal constituent. In the formula, R1 is a 1-8C organic group, R2 is an 6-20C alkyl group, 1-6C acyl group or 6-20C aryl group; and (n) is 0-2. As this kind of organosilane, tetramethoxysilane and the like are available. A mean grain size of the hollow polymer grain is desirably 0.03-10μm.
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