发明名称 VOLATILE MEMORY AND EMBEDDED DYNAMIC RANDOM-ACCESS MEMORY
摘要 PROBLEM TO BE SOLVED: To set a refresh region, to be refreshed actually, from the outside of a DRAM. SOLUTION: A refresh control register 21 is installed in such a way that a refresh control bit which is given from the outside and which indicates a region to be refreshed is stored. A refresh-address judgment circuit 22 is installed in such a way that a content RCB which is stored in the refresh control register 21 is compared with a refresh address RAi which is output by a refresh address generation circuit 11. An internal timing control circuit 5A stops the operation of a row decoder 3 and that of a sense amplifier 4 according to the judgment result of the refresh-address judgment circuit 22.
申请公布号 JP2000021162(A) 申请公布日期 2000.01.21
申请号 JP19980188728 申请日期 1998.07.03
申请人 MITSUBISHI ELECTRIC CORP 发明人 HIGUCHI TAKASHI
分类号 G11C11/403;G11C11/406;(IPC1-7):G11C11/403 主分类号 G11C11/403
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