| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor laser in which introduction of spot defect is suppressed by epitaxially growing a double heterostructure on the periphery of an active layer through pulse growth in an AlGaInP based semiconductor laser on an off substrate. SOLUTION: In order to realize a highly reliable semiconductor laser in which occurrence of spot defect, e.g. void, is suppressed by increasing diffusion length of group III material species on the crystal surface significantly, an AlGaInP based double heterostructure including an MQW active layer is formed on an off substrate, e.g. an (115)A GaAs substrate 200, by MOVPE epitaxial growth using pulse growth for supplying pulse-like group III material.
|
