| 摘要 |
PROBLEM TO BE SOLVED: To uniformly epitaxially grow an Si layer at low temps. to make semiconductor elements of a high current density at a high rate by forming steps on a substrate and forming a single crystal Si layer of specified thickness on the substrate including the steps by the catalytic CVD method. SOLUTION: A photo resist 2 is formed in specified pattern on one main surface of an insulation substrate 1 of quartz glass, crystallized glass, etc., and irradiated with e.g. F+ ions 3 of a plasma of CF4 with this resist used as a mask to form a plurality of steps 4 on the substrate 1 by the reactive ion etching(RIE) where the steps 4 are seeds for the epitaxial growth of a single crystal Si and may have a depth d of 0.1μm and width w of 1.5-1.9μm, the photo resist 2 is removed and a single crystal Si film 7 is epitaxially grown at several microns to 0.005μm thick on the entire surface including the steps 4 by the catalytic CVD method.
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