| 摘要 |
PROBLEM TO BE SOLVED: To form selectively a DRAM cell and an MROM cell without the addition or changing of process to stabilize normal potential applied to a second electrode of a capacitor, by mixedly arranging the DRAM cell and the MROM cell formed dependently on the state whether first electrode to be a data memory node in a capacitor or not. SOLUTION: A semiconductor memory device comprises a first memory cell and a second memory cell, both of which are formed on the same semiconductor substrate. In a DRAM region, only a plurality of memory cells comprising a first electrode (lower electrode 3) to be a data memory node, a capacitor having an upper electrode 1 connected to a normal potential terminal T, a transistor, a plurality of word lines WL connected with gate electrode 6 of transistors, and a plurality of bit lines BL connected with one end of source/ drain region of the transistor. Of the memory cells, the first electrode 3 is not formed in the MROM region on the same semiconductor substrate. That is to say, another part of the source/drain region 4 is not connected to the first electrode 3. |
