| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory for accelerating an accessing speed by inactivating a sense amplifier of a memory block not accessed and a reference voltage generator to reduce dissipation power, and activating the sense amplifiers and the reference voltage generators of all the blocks at the time of switching the blocks. SOLUTION: The semiconductor memory comprises memory blocks 101, 102 having general purpose address areas 101A, 102A, specific address areas 101B, 102B and memory block selecting terminals CS1, CS2 of terminals for selecting the memory block, and an address bus for supplying addresses to the blocks 101, 102. At the time of transiting addresses from an address bus to specific addresses, the areas 101B, 102B are accessed.
|
