发明名称 ION EXCLUSION STRUCTURE FOR FUSE WINDOW
摘要 PROBLEM TO BE SOLVED: To prevent moisture and mobile ions from penetrating a semiconductor device by providing a plurality of plugs for electrically connecting a metal layer that is formed to surround a fuse window layer for covering a fuse element and a semiconductor substrate. SOLUTION: A fuse window layer that is an insulation layer is formed on a first-type semiconductor substrate 550 with a well in multiple structure so that a fuse element 510 is covered. Then, multiple metal layers 520 and 560 are formed so that the fuse window layer can be surrounded. Then, a plurality of contact plugs 505 for electrically connecting a diffusion region 570 in the semiconductor substrate 550 and the lowermost multiple metal layer 520. The, a plurality of via plugs 530 are provided, the layers of the multiple metal layers 520 and 560 are electrically connected, and a conductive path is formed, thus effectively reducing such contaminant (especially, a mobile ion) as each kind of ion or metal.
申请公布号 JP2000021986(A) 申请公布日期 2000.01.21
申请号 JP19980347570 申请日期 1998.12.07
申请人 NANYA SCIENCE & TECHNOL CO LTD 发明人 O SHOYU;KAN ENKEN
分类号 H01L21/82;H01L23/525;(IPC1-7):H01L21/82 主分类号 H01L21/82
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