发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing an insulation film, having a low dielectric const. and a layer insulation film composed of this insulation film. SOLUTION: A raw material chemical liq. of an SOG film, i.e., a layer insulation film is carried pneumatically in a chemical liq. piping 4 with a pneumatic carrier gas contg. one of rare gases, inert gases, hydrocarbon gases and air as the main component and is coated from a chemical liq. nozzle 5, having a top end of an inner diameter smaller than the piping diameter of the chemical liq. piping 4 on a substrate 6 rotating at a specified speed. During pneumatic carrying to the liq. chemical nozzle 5 top end which has a small inner diameter from the liq. chemical piping 4, the raw material chemical liq. is compressed adiabatically, the pneumatic carrier gas is dissolved in the chemical liq. Than when the raw material chemical liq. is discharged in an open air above the substrate 6 from the chemical liq. nozzle 5, the chemical liq. is expanded adiabatically to form bubbles of the dissolved gas in the chemical liq., resulting in the small holes in the SOG film to be made to reduce the dielectric const. of the film.
申请公布号 JP2000021865(A) 申请公布日期 2000.01.21
申请号 JP19980196531 申请日期 1998.06.26
申请人 NIPPON STEEL CORP 发明人 TAKEBAYASHI SHIGETO
分类号 B05D1/40;H01L21/31;H01L21/316;(IPC1-7):H01L21/31 主分类号 B05D1/40
代理机构 代理人
主权项
地址