| 摘要 |
PROBLEM TO BE SOLVED: To provide a fabrication method for semiconductor laser in which selective growth is enhanced while suppressing strain due to compositional shift on the mesa stripe side face when a mixed crystal semiconductor of AlInP or AlGaInP is employed as a buried block layer. SOLUTION: In order to realize a highly reliable semiconductor laser in which a current block layer of sufficient thickness for reducing the operating current is formed by increasing selectivity of buried selective growth and strain is suppressed by reducing compositional shift in a current block layer 180 at the mesa stripe side face part, a mixed crystal semiconductor of AlInP or AlGaInP is employed as the buried block layer and diffusion length of material species is increased significantly on dielectric mask by MOVPE epitaxial growth of the buried layer 180 where group III material is supplied in pulse form.
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