| 摘要 |
PROBLEM TO BE SOLVED: To prepare desired transfer patterns with high accuracy while suppressing the explosive increase of the amount of data. SOLUTION: This preparing method of a mask pattern used for forming desired patterns on an exposed substrate by means of an exposure device, includes a process for making a correction of design data with respect to a first element for which the quantity of correction is determined depending on the disposition of patterns with sizes ranging below a predetermined one, a process for converting the corrected design data into mask plotting data, and a process for making a correction with respect to a second element other than the first element when the mask plotting data are introduced into a plotting device for performing plotting. |
